2sJ659 no.8584-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. ? motor drive, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --14 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --56 a allowable power dissipation p d 1.65 w tc=25 c40w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 85 mj avalanche current *2 i av --14 a note : * 1 v dd =30v, l=500 m h, i av =--14a * 2 l 500 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--7a 7 12 s static drain-to-source on-state resistance r ds (on)1 i d =--7a, v gs =--10v 102 133 m w r ds (on)2 i d =--7a, v gs =--4v 147 206 m w marking : J659 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en8584 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n1805qa ms im tb-00001072 2sJ659 p-channel silicon mosfet general-purpose switching device applications free datasheet http://www..net/
2sJ659 no.8584-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =--20v, f=1mhz 1020 pf output capacitance coss v ds =--20v, f=1mhz 110 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 76 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 180 ns turn-off delay time t d (off) see specified test circuit. 80 ns fall time t f see specified test circuit. 100 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--14a 21 nc gate-to-source charge qgs v ds =--30v, v gs =--10v, i d =--14a 3.8 nc gate-to-drain miller charge qgd v ds =--30v, v gs =--10v, i d =--14a 4.5 nc diode forward voltage v sd i s =--14a, v gs =0v --1.0 --1.2 v package dimensions package dimensions unit : mm unit : mm 7513-002 7001-003 switching time test circuit avalanche resistance test circuit 10.2 8.8 11.0 2.7 11.5 (9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.55 2.55 1.2 1 : gate 2 : drain 3 : source sanyo : smp pw=10 m s d.c. 1% p. g 50 w g s d i d = --7a r l =4.29 w v dd = --30v v out 2sJ659 v in 0v --10v v in 50 w 0v --10v 3 50 w rg dut v dd l 10.2 8.8 1.5max 2.7 9.9 3.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.55 2.55 0 to 0.3 12 3 2.55 2.55 1 : gate 2 : drain 3 : source sanyo : smp-fd free datasheet http://www..net/
2sJ659 no.8584-3/4 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs ciss, coss, crss -- v ds i s -- v sd ? y fs ? -- i d sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a 3 100 10 7 5 2 3 1000 7 5 2 3 10000 7 5 2 3 10 1.0 7 5 2 3 100 7 5 2 3 1000 7 5 2 50 100 150 200 250 300 350 --50 --25 0 25 50 75 100 125 150 0 --50 --100 --150 --200 --250 --300 --2 --3 --4 --5 --6 --7 --8 --9 --10 it08727 it08728 it08725 it08726 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 -- 5 --10 --15 --20 --25 --30 0 -- 5 --10 --15 --20 --25 --30 0 --30 --10 --15 --20 --25 -- 5 it08732 it08730 it08729 0 0 --1 --2 --3 --4 --5 --6 --7 v gs = --3v --4v --6v --10v tc= 25 c 25 c 25 c --25 c tc= --25 c 75 c tc= 75 c i d = --7 a tc=75 c 25 c -- 25 c i d = --7a, v gs = --4v i d = --7a, v gs = --10v f=1mhz coss ciss crss it08731 23 57 --10 --0.1 23 57 --1.0 t d (off) t f t d (on) t r v dd = --30v v gs = --10v v ds = --10v --1.5 --1.2 --0.6 --0.3 --0.9 0 --0.01 --0.1 5 7 3 2 --1.0 5 7 3 2 --10 5 7 3 2 --100 5 7 3 2 3 1.0 7 5 3 10 7 5 2 3 100 7 5 2 --1.0 --10 23 57 --0.1 23 57 23 tc= --25 c 75 c 25 c v ds = --10v tc= 75 c 25 c -- 25 c v gs =0v free datasheet http://www..net/
2sJ659 no.8584-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of november, 2005. specifications and information herein are subject to change without notice. p d -- tc a s o v gs -- qg p d -- ta total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w ambient temperature, ta -- c allowable power dissipation, p d -- w 3 --1.0 --0.1 7 5 2 3 --10 7 5 2 3 --100 7 5 2 23 57 --100 --1.0 23 57 --10 it08734 it08733 0 4 8 12 24 16 20 0 -- 2 -- 4 -- 6 -- 8 -- 9 -- 1 -- 3 -- 5 -- 7 --10 v ds = --30v i d = --14a it08736 0 0 20 40 60 80 100 120 45 30 40 35 25 140 160 20 15 10 5 i dp = --56a i d = --14a 100 m s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). it08735 0 0 20 40 60 80 100 120 1.65 140 160 0.5 1.0 1.5 2.0 10 m s tc=25 c single pulse note on usage : since the 2sJ659 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. free datasheet http://www..net/
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